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A Product Line of
Diodes Incorporated
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
V (BR)DSS
-20V
R DS(on)
0.025 Ω
I D
-8.0A
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High pulse current handling in linear mode
Low on-resistance
Fast switching speed
Low gate drive
Description and Applications
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Low profile SOIC package
This high density MOSFET utilizes a unique structure that combines
Mechanical Data
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
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Case: SO-8
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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Inrush protection circuits
DC-DC Converters
Power management functions
Disconnect switches
Motor control
SO-8
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Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
G
S
Top View
Ordering Information
(Note 1)
Top View
Equivalent Circuit
Product
ZXM66P02N8TA
Marking
See below
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
Notes:
1. For packaging details, go to our website.
Marking Information
ZXM
66P02
YYWW
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
1 of 5
www.diodes.com
October 2009
? Diodes Incorporated
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